Organic electroluminescence element and manufacturing method thereof

ABSTRACT

To improve the light emission characteristics of a device when a transition metal oxide is used for the hole injection layer, in particular, to enhance the electron blocking characteristics of a transition metal oxide. An organic electroluminescence element comprising an anode, a cathode and a plurality of functional layers formed between the anode and the cathode, the functional layer containing a layer with a light-emitting function composed of at least one kind of an organic semiconductor and, between the anode and the layer with a light-emitting function, a charge injection layer composed of at least one kind of a transition metal oxide, wherein the ratio of the metal to oxygen at the anode side of the transition metal oxide layer is smaller than the stoichiometric ratio and at the same time, the ratio of the metal to oxygen at the layer with a light-emitting function side is greater than that at the anode side.

BACKGROUND

The present invention relates to an organic electroluminescence elementand a manufacturing method thereof. More specifically, the presentinvention relates to an organic electroluminescence element which isused, for example, in a display or display element for cellular phonesor in various light sources and which is an electroluminescence elementdriven over a wide brightness range from low brightness to highbrightness in usage for a light source or the like.

The organic electroluminescence element is a light-emitting deviceutilizing an electroluminescence phenomenon of a solid fluorescentsubstance and is partially put into practical use as a small display.

The organic electroluminescence element can be classified into severalgroups by the material used for the light-emitting layer. Onerepresentative example is a low-molecular organic electroluminescenceelement using an organic compound with a low molecular weight for thelight-emitting layer, which is manufactured mainly using vacuum vapordeposition. Another example is a polymer organic electroluminescenceelement using a polymer compound for the light-emitting layer.

In the case of a polymer organic electroluminescence element, use of asolution prepared by dissolving materials constituting each functionallayer enables film formation by a wet coating method such as spincoating, inkjet coating, nozzle coating, cap coating, spraying andprinting. Thanks to this simple process, the wet coating method isattracting attention as a technique that can be expected to realize costreduction and large screen area.

A typical polymer organic electroluminescence element is fabricated bystacking a plurality of functional layers such as charge injection layerand light-emitting layer. The construction and fabrication procedure ofa representative polymer organic electroluminescence element aredescribed below.

For example, as shown in FIG. 8, on a glass substrate 100 where an ITO(indium tin oxide) film is formed as the anode 1122, a PEDOT:PSS (amixture of polythiophene and polystyrenesulfonic acid; hereinafterreferred to as PEDT) thin film is formed as the electron (hole)injection layer 1123 by a spin coating method or the like. PEDT is amaterial that is a de-facto standard as the charge injection layer, andfunctions as the hole injection layer when disposed on the anode side.

On the PEDT layer, an interlayer 1124 composed of an organic polymermaterial is provided. The interlayer is, for example, a copolymer of atriphenylamine derivative and polyfluorene. For example,poly-(2,7(9,9-di-n-octylfluorene)-(1,4-phenylene-((4-sec-butylphenyl)imino)-1,4-phenylene))indicated by TFB is used. This compound is excellent in the holeinjection property and at the same time, has an electron blockingfunction. Therefore use of the compound brings about elevation of thelight emission efficiency and improvement of the driving lifetime. Next,polyphenylene vinylene (hereinafter, indicated by PPV) and a derivativethereof, or polyfluorene and a derivative thereof, is film-formed as thelight-emitting layer 1125 by a spin coating method or the like. On thelight-emitting layer, injection of an organic material into the lowestunoccupied molecular orbital (LUMO) is efficiently performed using anelectron injecting material 1126 of a material with a small workfunction such as an alkali metal or alkaline earth metal (e.g., Ba, Ca,Mg, Li, Cs) or a fluoride, oxide or carbonate of the metal above, e.g.,LiF, BaO, CsCO₃. Thereafter, a metal electrode 1127 such as Al or Ag isprovided as the cathode. The film of these metals is formed by a vacuumvapor deposition method, a sputtering method or a wet coating method.

In this way, the polymer organic electroluminescence element can befabricated by a simple and easy process and because of this excellentproperty, its application to various uses is expected. However, PEDT:PSSused as the hole injection layer is an acidic water-soluble chemicalcompound, and this incurs the following problems: first, a problem inview of apparatus, that is, the compound corrodes metal portions of thecoating apparatus used; secondly, a problem ascribable to badwettability to a partition wall formed mainly of a resist material andprovided to divide a picture element; and thirdly, a serious problemthat because the compound has bad wettability to a material which has alight-emitting function and is dissolved in an organic solvent, when thepicture element is divided into fine pixels of a display or the like,the uniformity of the coated film within a pixel becomes insufficient toimpair the light emission uniformity or allow easy occurrence of shortcircuiting. Also, it is known that chemical deterioration is caused bythe injection of an electric charge and adversely affects the lifetime.

Reduction of the light emission intensity, that is, deterioration, ofthe polymer organic electroluminescence element proceeds in proportionto the product of the electric energization time and the current flowingin the element, but its details are not yet elucidated and intensivestudies thereon are being made.

Reduction of the light emission intensity is presumed to be broughtabout by various causes, but the cause is considered to be a combinationof various factors such as stability of the light-emitting materialitself or a functional layer (e.g., hole injection layer, electroninjection layer) against an electron or a hole, side reaction from anexciton, thermal stability, stability of interface between layers,diffusion of a material due to heat, and oxidation of a cathodematerial.

In the polymer electroluminescence element, as described above,deterioration of PEDT is considered to be one of main causes of thereduction of the light emission intensity. As previously indicated, PEDTis a mixture of two polymer substances, that is, polystyrenesulfonicacid and polythiophene. The former is ionic and the latter has localpolarity in the polymer chain. These two polymer substances are looselybound through a Coulomb interaction ascribable to the electric chargeanisotropy, and excellent charge injection characteristics are therebyexerted.

In order for PEDT to exert excellent characteristics, an intimateinteraction between those two substances is indispensable, but ingeneral, a mixture of polymer substances is likely to cause phaseseparation due to a subtle difference of solubility in a solvent. Thisis no exception to PEDT. Occurrence of phase separation indicatesrelatively easy breaking of the loose binding between two polymers. Thephase separation suggests that when driven in an organicelectroluminescence element PEDT may be unstable. Also, as a result ofphase separation, a component not contributing to the binding, inparticular, an ionic component, may diffuse due to an electric fieldassociated with electric energization and adversely affect otherfunctional layers. In this way, despite excellent charge injectioncharacteristics, PEDT is not a stable substance by any means.

Against the above-described concern about PEDT, the present inventorshave made various experiments and, based on the experiment results,proposed to form a transition metal oxide such as molybdenum oxide MoO₃between an anode and a light-emitting layer instead of PEDT, and goodinjection characteristics can be thereby obtained (see, JP-2005-203340).

The problem relevant to the hole injection layer is greatly improved bythe above invention, but from the standpoint of light emissionefficiency, more improvements are being demanded, because the lightemission efficiency sometimes decreases depending on the material used.

There have been also proposed a light-emitting diode having a laminatedfilm of MoS₂ and MoO₃ formed by a coating method and a light-emittingelement containing an electrode having a structure ofITO/MoS₂/MoO₃/polymer organic semiconductor layer with MoS₂ beingannealed (see, Journal of Applied Physics, Vol. 92, 7556-7563 (2002) andAdvanced Materials 2002, Vol. 14, 265-268). In both of these, MoS₂ isformed by a coating method and therefore, there is a problem that notonly formation with a uniform thickness is difficult due to surfacebulging in the pattern edge but also MoS₂ allows for a large leakagecurrent to increase the leakage current with an adjacent pixel and ishard to integrally form particularly when achieving microfabrication andhigh integration.

Also, it is reported that when tungsten oxide is evaporated on ITO by anelectron beam method and heat-treated at 450° C. to vapor-deposit a lowmolecular-type organic EL material, the light emission efficiency isenhanced (see, Synthetic metals, 151, 141-146 (2005)). But thistechnique cannot be used because the annealing temperature is as high as450° C. and the high temperature adversely affects other constituentmembers such as insulating film or partition wall for the separation ofa picture element in fabricating a display or the like. Furthermore,because the optimal film thickness is as very thin as 1.5 nm and thefilm thickness dependency is also large, there is a serious drawback ofvariation when a large-size substrate of second or greater generation isused.

A case of using nickel oxide is also known (see, Thin Solid Films, 515,5099-5102 (2007)). This is a method of vapor-depositing a 10 nm-thick Nimetal and then heat-treating it at 500° C. to effect conversion intonickel oxide. The publication above indicates that emission efficiencyis enhanced by performing a heat treatment and the optimal condition is4 hours. However, also in the technique of this publication, theannealing temperature is high and, since metallic Ni is underlying,there is a problem that cross-talk occurs if the underlayer is entirelyoxidized. In addition, it is not indicated that high efficiency can beachieved compared with the conventionally employed hole injection layersuch as starburst amine or copper phthalocyanine.

In the case of using a large-size substrate, the large film thicknessdependency greatly affects the yield and leads to incapability of stablemass production.

In this way, in the structure above, a hole injection layer composed ofa transition metal oxide having a film thickness of approximately from10 to 100 nm is used on an anode, and a functional layer such aslight-emitting layer is formed thereon. The functional layer is mainlyformed from an interlayer and a light-emitting layer or an electrontransport layer and since the interlayer used here is a thin film havinga thickness of around about 20 nm and contains almost the same organicsolvent as the light-emitting material, intermixing between layers oftenoccurs. Furthermore, the interlayer is required to have an electronblocking function so as to cause an electron injected from a cathode tostay in the light-emitting layer but cannot completely block an electrondue to an intermixing problem between layers or a problem in view ofchemical structure and a part of electrons are allowed to pass into ananode without being used for recombination, as a result, there arises aproblem such as failure in obtaining sufficient emission efficiency.

Under these circumstances, the present invention has been made and anobject of the present invention is to improve the light emissioncharacteristics of a device when a transition metal oxide is used forthe hole injection layer.

In particular, an object of the present invention is to enhance theelectron blocking characteristics of a transition metal oxide.

SUMMARY

The present invention is an electroluminescence element comprising ananode; a cathode; a plurality of functional layers formed between theanode and the cathode, the functional layer including a layer with alight-emitting function formed from at least one kind of an organicsemiconductor; a charge injection layer formed between the anode and thelayer with a light-emitting function and formed of at least one kind ofa transition metal oxide. A ratio of the transition metal to oxygen atthe anode side in the transition metal oxide layer is smaller than astoichiometric ratio and a ratio of the transition metal to oxygen atthe layer with a light-emitting function side is greater than that atthe anode side.

Usually, a transition metal oxide such as molybdenum oxide film-formedin a reducing atmosphere is oxygen-deficient based on the stoichiometricratio and as compared with those where the ratio of the metal to oxygenis the stoichiometric ratio, the specific resistance is small enough toallow for hole transport. On the other hand, molybdenum oxide at thestoichiometric ratio is known to be an insulator. Accordingly, when ahole injection layer formed in this way is subjected to a surfaceoxidation treatment such as heat treatment, UV treatment or oxygenplasma treatment in the atmosphere, oxidation proceeds only in thesurface to relatively increase the proportion of oxygen and bring aboutapproximation to the theoretical ratio of the compound, and theinsulating property is thereby enhanced, as a result, an electronblocking function is exerted. Also, in the case of forming a holeinjection layer across a plurality of picture elements, when thespecific resistance is small, cross-talk readily occurs to decrease theimage contrast and therefore, although depending on the requiredspecification of contrast, the original specific resistance at the filmformation is preferably above a certain resistance. Furthermore, it isexperimentally known that if oxidation further proceeds to establish thestoichiometric ratio in the entire layer, conversely, the injectionefficiency is greatly impaired. For this reason, an oxygen-deficientregion and a region having a value close to the stoichiometric rationeed to be present together. As described above, a layer having acomposition nearly in the stoichiometric ratio is an insulator andtherefore, in this case, the mechanism of bringing about injection of ahole is considered to utilize a tunnel current. Accordingly, this layercan be imparted with an electron blocking function, enabling omission ofan electron blocking layer formed of an organic material, and thanks tomore reduction in the film thickness, an organic electroluminescenceelement that is driven at a low voltage and has high emission efficiencycan be provided.

The present invention includes the organic electroluminescence elementaccording to aforementioned one that the transition metal oxide layer isa transition metal oxide layer formed by performing a surface oxidationtreatment after film formation.

By virtue of this construction, a state where an oxygen-deficient regionand a region having a value close to the stoichiometric ratio arepresent together can be easily obtained after film formation of thetransition metal oxide Layer. In the oxidation treatment, oxidation isconsidered to proceed in the thickness direction of a thin filmaccording to the time, power, temperature and the like of the oxidationtreatment, but if oxidation proceeds and the stoichiometric ratio isestablished in the entire layer, conversely, the injection efficiency isgreatly impaired. Accordingly, in order to maximally bring out theeffect of enhancing the light emission efficiency of the presentinvention, it is considered to be necessary that on the side in contactwith the anode, oxygen deficiency is present to form a defect level onHOMO (Highest Occupied Molecular Orbital) and on the side in contactwith a material having a light-emitting function, only the extremesurface is subjected to an oxidation treatment.

The present invention also includes the organic electroluminescenceelement according to aforementioned one that the transition metal oxidelayer contains a transition metal oxide layer with the surface whichsurface is oxidized by a heat treatment.

According to this construction, the transition metal oxide layer can beformed in a short time by performing an oxidation treatment with goodworkability.

The present invention also includes the organic electroluminescenceelement according to aforementioned one that the transition metal oxidelayer contains a transition metal oxide layer which surface is oxidizedby an ultraviolet treatment.

According to this construction, the ultraviolet irradiation time is easyto control, so that the oxide depth can be controlled with highprecision.

The present invention also includes the organic electroluminescenceelement according to aforementioned one that the transition metal oxidelayer contains a transition metal oxide layer which surface is oxidizedwith an oxygen-containing plasma.

Accordingly to this construction, the oxide depth can be controlled withhigher precision by controlling the plasma intensity, plasma density andaccelerating time.

The present invention also includes the organic electroluminescenceelement according to aforementioned one that the transition metal oxidelayer is formed by a dry process.

By virtue of this construction, a transition metal oxide that is stableand excellent in the film quality can be formed.

In organic electroluminescence element above of the present inventionout of the transition metal oxide layers, the transition metal oxidelayer positioned on the anode side preferably has a specific resistanceof 1×10 exp(5)Ωcm or more.

By virtue of this construction, cross-talk can be reduced even when thetransition metal oxide layer is integrally formed across a plurality ofpicture elements. Incidentally, in the case where the hole injectionlayer is not formed across a plurality of picture elements but isindependently formed for each picture element, the cross-talk does notsubstantially occur as a problem and therefore, in order to reduce thevoltage drop ascribable to the transition metal oxide layer itself andenable high brightness emission, the transition metal oxide layer abovepreferably has a lower specific resistance of 10,000 Ωcm or less.

The present invention also includes the organic electroluminescenceelement according to aforementioned one that the transition metal-oxidelayer is integrally formed across a plurality of picture elements.

According to this construction, even when the transition oxide layer isintegrally formed across a plurality of picture elements, the problem ofcross-talk does not arise by virtue of the large specific resistance andthe layer with a light-emitting function formed thereon, particularlythe coating-type layer, can easily have a uniform film thickness withoutcausing variation of the contact angle, because the underlying layer isentirely formed of the same material. In this case, a picture elementregulating layer is preferably formed below the transition metal oxidelayer.

In the organic electroluminescence element above of the presentinvention, the visible light transmittance of the metal oxide layer ispreferably 70% or more.

By virtue of this construction, a sufficiently large quantity of emittedlight can be maintained.

Also, the present invention is a method for manufacturing anelectroluminescence element comprising an anode; a cathode; a pluralityof functional layers formed between the anode and the cathode, thefunctional layer including a layer with a light-emitting function formedfrom at least one kind of an organic semiconductor; and a chargeinjection layer formed between the anode and the layer with alight-emitting function and formed of at least one kind of a transitionmetal oxide layer. The method comprises the step of forming thetransition metal oxide layer is a step of forming the transition metaloxide layer such that the ratio of the metal to oxygen at the anode sidein the transition metal oxide layer is smaller than the stoichiometricratio and the ratio of the metal to oxygen at the layer with alight-emitting function side is greater than that at the anode side

As described above, according to the present invention, the transitionmetal oxide thin film formed to have oxygen deficiency is in anoxygen-deficient state and allows for injection of a hole, despite highspecific resistance, but the light emission efficiency sometimesslightly decreases according to the light-emitting material used. Thereason therefor is considered because the electron blocking ability isinsufficient. In order to compensate for this reduction of lightemission efficiency, it may be effective to shift the recombinationregion of a hole and an electron to the side closer to the cathodewithout locating it at the interface between the interlayer and thelight-emitting layer, but the energy is sometimes transferred out to thecathode side depending on the diffusion distance of an exciton producedand a sufficiently high effect may not be obtained. In the presentinvention, after the formation of a transition metal oxide thin filmhaving oxygen deficiency, only the extreme surface layer is oxidized bysurface oxidation or the like to relatively increase the proportion ofoxygen and bring about approximation to the theoretical ratio of thecompound, and an electron blocking function is thereby exerted in thesurface, so that an organic electro-luminescence element with highemission efficient can be manufactured.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 A schematic explanatory view showing the structure of the organicelectroluminescence element according to embodiment 1 of the presentinvention.

FIG. 2 A schematic explanatory view showing the structure of the organicelectroluminescence element according to embodiment 2 of the presentinvention.

FIG. 3 A schematic explanatory view showing the structure of the organicelectroluminescence element in Example 3 of the present invention.

FIG. 4 An equivalent circuit diagram of the display device according toembodiment 3 of the present invention.

FIG. 5 A layout explanatory diagram of the display device according toembodiment 3 of the present invention.

FIG. 6 A cross-sectional view of the display device according toembodiment 3 of the present invention.

FIG. 7 A top surface explanatory diagram of the display device accordingto embodiment 3 of the present invention.

FIG. 8 An explanatory view showing the organic electroluminescenceelement of a conventional example.

EMBODIMENTS

Embodiments of the present invention are described in detail below byreferring to the drawings.

Embodiment 1

The fundamental structure of the polymer organic electroluminescenceelement according to embodiment 1 of the present invention illustratedin FIG. 1 is described.

As shown in FIG. 1 illustrating a schematic explanatory view of thestructure, this embodiment is characterized in that by oxidizing thesurface of a molybdenum oxide layer (MoO_(x)) as the transition metaloxide layer formed between an anode and a layer with a light-emittingfunction, the ratio of the molybdenum to oxygen on the anode side(MoO_(x1)) of the molybdenum oxide layer is made smaller in terms of theoxygen content than the stoichiometric ratio and the ratio of themolybdenum to oxygen at the layer with a light-emitting function side(MoO_(x2)) is made greater than that at the anode side. In the formulae,X2<3 and X1<X2. In other words, a bottom emission-type organicelectroluminescence element is fabricated, where a surface oxidizedmolybdenum oxide thin film as the hole injection layer 3 and a polymermaterial as the light-emitting layer 4 are sequentially stacked on ananode 2 composed of an indium tin oxide (ITO) layer formed on alight-transmitting glass substrate 1, an electron injection layer 5composed of an alkaline earth metal is further formed thereon, and acathode 6 composed of an aluminum layer is sequentially stacked as anupper layer.

More specifically, the organic electroluminescence element of thisembodiment comprises, as shown in FIG. 1, a substrate 1 composed of alight-transmitting glass material, an ITO thin film as the anode 2formed on the substrate 1, and layers further formed thereon, that is, atransition metal oxide thin film as the charge injection layer 3, alight-emitting layer 4 composed of a polymer material, an electroninjection layer 5 composed of a barium layer, and a cathode 6 composedof an aluminum layer.

When a DC voltage or a DC current is applied using the anode 2 of theorganic electroluminescence element above as a plus electrode and thecathode 6 as a minus electrode, a hole is injected into thelight-emitting layer 4 composed of a polymer film from the anode 2through the hole injection layer 3 and at the same time, an electron isinjected thereinto from the cathode 6. In the light-emitting layer 4,recombination of the thus-injected hole and electron takes place andwhen an exciton generated by the recombination undergoes a transitionfrom an excited state to a ground state, a luminescence phenomenonoccurs.

According to the organic electroluminescence element of this embodiment,the hole injection layer is composed of a surface-oxidized molybdenumoxide and therefore, stabilization and enhancement of injectioncharacteristics can be achieved, which enables enhancing the lightemission characteristics and prolonging the lifetime, so that a bottomemission-type organic electroluminescence element with high reliabilitycan be fabricated.

In embodiment 1, it is more effective that not only the ratio ofmolybdenum to oxygen at the layer with a light-emitting function side(MoO_(x2)) is greater than that at the anode side but also theproportion of oxygen is greater than the stoichiometric ratio (X2>3).

Embodiment 2

The fundamental structure of the polymer organic electroluminescenceelement according to embodiment 2 of the present invention illustratedin FIG. 2 is described.

The difference of this embodiment from the organic electroluminescenceelement of embodiment 1 is that, as shown in FIG. 2, an interlayer(electron blocking layer) 7 having a film thickness of about 20 nm andbeing composed of TFB is caused to intervene between the light-emittinglayer 4 and the molybdenum oxide 3 as the hole injection layer of theorganic electroluminescence element of embodiment 1 shown in FIG. 1.This interlayer has a LUMO level at a position shallower than thelight-emitting layer and can be designed such that substantially noelectron transfer occurs by forming a barrier to electron injection fromthe light-emitting layer into the interlayer or making the electronmobility smaller than the hole mobility. Other parts are formedsimilarly to the organic electroluminescence element of embodiment 1.

More specifically, the organic electroluminescence element of thisembodiment comprises, as shown in FIG. 2, a substrate 1 composed of alight-transmitting glass material, an indium tin oxide (ITO) thin filmas the anode 2 formed on the substrate 1, and layers further formedthereon, that is, a surface-oxidized transition metal oxide thin film asthe hole injection layer 3, an interlayer 7, a light-emitting layer 4composed of a polymer material, an electron injection layer 5, and acathode 6 composed of an aluminum layer.

Also in this case, when a DC voltage or a DC current is applied usingthe anode 2 of the organic electroluminescence element above as a pluselectrode and the cathode 6 as a minus electrode, a hole is injectedinto the light-emitting layer 4 that is composed of a polymer film andformed by a coating method, from the anode 2 through the hole injectionlayer 3 and at the same time, an electron is injected thereinto from thecathode 6. Here, the interlayer 7 acts as the electron blocking layer.In the light-emitting layer 4, recombination of the thus-injected holeand electron takes place and when an exciton generated by therecombination undergoes a transition from an excited state to a groundstate, a luminescence phenomenon occurs.

According to the organic electroluminescence element of this embodiment,in addition to the operation and effect of embodiment 1, owing tointervention of the interlayer 7, the electron blocking function is moreenhanced and the probability of recombination of an electron and a holecan be raised, which enables enhancing the light emissioncharacteristics and prolonging the lifetime, so that an organicelectroluminescence element with high reliability can be fabricated.

In advance of description of the following Examples, respectivecomponents constituting the organic electroluminescence element of thepresent invention are described.

(Electron Injection Layer)

The electron injection layer of Examples can be composed of an alkalimetal or alkaline earth metal having a small work function. Specificexamples thereof include, but are not limited to, Ca, Ba, Li and Cs.Other than these metals, their oxides (e.g., CaO, BaO, Li₂O, Cs₂O₃, MgO)and halides (e.g., LiF) are included.

It is also preferred to use titanium oxide, zinc oxide or the likehaving a defect level. In the case of using such a material, even whenthe element is left standing in the atmosphere, the reaction withmoisture or oxygen is decreased in comparison with the case of using analkali metal and/or an oxide, halide or carbonate thereof and driving inthe atmosphere, which is supposed to be a drawback of the organic EL,becomes possible.

In the case where such titanium oxide or zinc oxide is used as theelectron injection layer and combined with the hole injection layer ofthe present invention, since the hole injection layer of the presentinvention has an electron blocking function, even when an interlayer isnot used, an exciton produced undergoes recombination without allowingenergy transfer to an electrode and therefore, the light emission regionin the light-emitting layer can be shifted to the hole side. In turn,the layer construction becomes simple, which contributes to enhancementof the yield or reduction of the cost. In this case, the layerconstruction is anode/transition metal oxide layer/organiclight-emitting layer/transition metal oxide layer/cathode and is a verysimple construction. The transition metal oxide layer sandwiched betweenthe cathode and the organic light-emitting layer preferably contains, asa dopant, an alkali metal or alkaline earth metal such as CaO, BaO,Li₂O, Cs₂O₃ and MgO. These are unstable in the atmosphere but when dopedin molybdenum oxide or the like having a defect level, the instabilityis decreased and at the same time, the electron injection property canbe improved. Moreover, since the periphery thereof is covered with atransition metal oxide matrix, diffusion into other layers less occursand an adverse effect is hardly given on the light emission efficiencyor driving lifetime. In general, release of an electron is expected tobecome difficult, but in the case of the present invention, as a resultof various experiments, good electron releasability is exhibited withlittle occurrence of such a side effect. Accordingly, by the use of theelement structure of the present invention, an electron transport layercomposed of an organic material or a layer composed of an alkali metalor the like having a low work function, which has been conventionallyrequired, need not be disposed and a robust element can be obtained.

As for the impurity-containing transition metal oxide layer used as theelectron injection layer in the present invention, those having a workfunction of 4 to 6 eV are preferably used, but the present invention isnot limited thereto.

Incidentally, zinc is recently sometimes classified into therepresentative element but is dealt with here as an element included inthe transition metal element of the present invention.

(Hole Injection Layer)

For the hole injection layer used in the present invention, a transitionmetal oxide is preferably used.

When a transition metal oxide is used, an electrode material evencontaining an ionic substance acts as a barrier layer, and a reactivesubstance is not allowed to diffuse from the electrode side and incurdeterioration of the light-emitting layer. Also, in the case of forminga thin film of a transition metal oxide such as molybdenum oxide, nickeloxide and vanadium oxide by a process of creating a defect level orproducing a difference in the oxidation number, efficient chargeinjection of the organic electroluminescence element is attained.Furthermore, when the specific resistance is small, in use as a thinfilm of 1 μm or less, the voltage drop is reduced and an electric fieldapplied between two electrodes is directly applied to the light-emittinglayer, which enables driving at a low voltage. In addition, thetransition metal oxide thin film of the present invention has multiplefunctions such as electron injection property, electron transportproperty and electron blocking property and therefore, highfunctionality can be obtained by a single layer, making it possible tosimplify the layer construction of the element and realize a low-costdevice.

The thickness of the surface-oxidized transition metal oxide layer ispreferably from 1 nm to 1 μm.

If the thickness exceeds 1 μm, high transmittance can be hardly ensured.Considering the film-forming time, the thickness is more preferably 500nm or less. Also, in the case of a thin thickness, even when the layeris not in a film state but in an island state, as long as the averagethickness is about 1 nm, the same effects as above can be obtained. Ifthe thickness is less than 1 nm, sufficient hole injectioncharacteristics cannot be obtained.

Specifically, other than molybdenum oxide, for example, tungsten oxide,nickel oxide, vanadium oxide and ruthenium oxide may be used, but thepresent invention is not limited thereto. Such a compound takes aplurality of oxidation states and becomes an insulator when the ratio ofmetal to oxygen is the stoichiometric ratio or exhibits electricalconductivity when having an oxygen deficiency, and an electron blockingagility can be imparted to the compound by controlling the oxidationstate in the film thickness direction as in the present invention. Theoxidation number or composition can be confirmed by XPS (X-rayphotoelectron spectroscopy) analysis.

As for the surface oxidation method, oxidation after film formation issimple and easy. For example, various methods such as UV irradiation orheat treatment in an oxygen-present atmosphere, oxygen plasmairradiation, and oxidation treatment by solution may be applied, and themethod is not limited. It is also possible to form a film while varyingthe conditions such that the ratio of metal to oxygen reaches a desiredvalue during, the film formation described later.

(Light-Emitting Layer-Interlayer)

On the hole injection layer, a light-emitting layer is formed by coatingan organic semiconductor material. At this time, in view of lightemission efficiency, an interlayer is preferably provided as the holeblocking layer between the light-emitting layer and the hole injectionlayer. For the hole blocking layer, a polyfluorene-based polymermaterial having a LUMO level higher than the material used for thelight-emitting layer or having low electron mobility, such as TFB havinga triphenylamine skeleton, is used, but the present invention is notlimited thereto. As regards the light-emitting layer, in the case of apolymer type, in addition to the polyfluorene-based and polyphenylenevinylene-based copolymers, as long as a thin film can be formed bydissolving the polymer in a solvent and coating the solution, thepolymer is not limited in its kind, including a pendant type, adendrimer type, and a type that is coated after doping a low-molecularlight-emitting material into a coating-type low molecular or polymerhost capable of dissolving in a solution and exhibiting good thin-filmperformance without causing crystallization or the like.

In the organic electroluminescence element of the present invention, thelayer with a light-emitting function is not limited to a polymercompound, and any of a low molecular compound, an oligomer and the likemay be used. As for these materials, conventionally known materials maybe used.

A representative structure of the low molecular electroluminescencedevice includes a layer structure of substrate/anode/hole injectionlayer/hole transport layer/electron blocking layer/light-emitting layer(including a doping material)/hole blocking layer/electron transportlayer/electron injection layer/cathode, but other than this, the layerstructure has various variations. Like this, the structure is amultilayer structure compared with the polymer-type electroluminescencedevice, which is a factor of rising cost. By using the hole injectionlayer of the present invention, a hole injection layer, a hole transportlayer and an electron blocking layer can be integrated, and this iseffective in reducing the cost.

(Layer Construction)

In the example above, a so-called bottom emission type of extractinglight from the substrate side is described, but the top emission type ofextracting light from the direction opposite the substrate (in thiscase, a high-reflectance silver alloy or aluminum alloy is preferablyused as the anode) includes a reverse structure type where the anode andthe cathode are reversely disposed, a top emission type thereof, and thelike and, in terms of the material, is applicable when using variouscompounds such as fluorescent material and phosphorescent material. Inthis case, by providing the hole injection layer of the presentinvention, generation of a so-called hillock that is readily producedwhen heating a reflective anode can be prevented.

(Cathode)

As for the cathode, a material capable of establishing ohmic contactwith the electron injection layer of the present invention is preferred.A general metal typified by Al, Ag or Au, a transparent electricallyconductive oxide typified by ITO and IZO, and the like are preferablyused.

(Encapsulation)

The device of the present invention is preferably subjected toencapsulation. In the case of a conventional electroluminescence device,an enormous cost is required for ensuring the reliability, for example,use of an encapsulating resin having as small moisture permeability aspossible, film encapsulation by a thin film layer formed on the element,or sealing of a desiccant is employed. According to the presentinvention, simple encapsulation of the device is necessary, but the costcan be reduced by a conventional encapsulation method. The simpleencapsulating material can be widely selected from existing materials.

(Film Formation Method)

Out of the functional layers constituting the organicelectroluminescence element of the present invention, the transitionmetal oxide layer configured such that the ratio of the transition metalto oxygen on the anode side is small in terms of the oxygen content thanthe stoichiometric ratio and at the same time, the ratio of thetransition metal to oxygen at the layer with a light-emitting functionside is greater than that at the anode side, is preferably formed by adry process such as vacuum vapor deposition, electron beam vapordeposition, molecular beam epitaxy, sputtering, reactive sputtering, ionplating, laser ablation, thermal CVD, plasma CVD and MOCVD.

It is known from experimental results that in such a dry process, thesubstrate temperature is preferably controlled. Incidentally, in thecase of a vapor deposition method, enhancement of brightness andreduction of light emission initiating voltage can be achieved bysetting the substrate temperature to from 60 to 100° C. Also in the caseof a sputtering method, despite a rise of the substrate temperatureduring sputtering, in view of introducing necessary oxygen defects, itis preferred to raise the substrate temperature from the starting pointof sputtering.

The film may also be formed while changing the introduced amount ofoxygen in the course of sputtering a metal target by using a reactivesputtering method. That is, a continuous formation method offilm-forming a first layer having an oxygen defect and then film-forminga transition metal oxide layer while increasing the oxygen content isalso effective.

Furthermore, a composition gradient film may also be formed by vaporco-deposition while changing the amount of evaporation from the target.

It is also effective to form a film by a co-sputtering method using as atarget an alloy obtained by mixing transition metal oxides differing inthe composition or using a plurality of targets containing a pluralityof kinds of transition metals such as molybdenum and tungsten. Also inthis case, a transition metal oxide film having a desired oxygen contentcan be obtained by performing the sputtering while changing the amountof oxygen or while switching the target between those differing in theoxygen content.

The film thickness is preferably in the range not impairing the holeinjection property and is preferably from several nm to 500 nm. The filmthickness is preferably thin because the transmittance loss increaseswhen the film thickness becomes thick, but the film thickness may bedetermined by taking into consideration the variation and the like atthe mass production.

A nanoparticle or the like of an oxide is also applicable. In this case,the film formation method may be appropriately selected also from wetprocesses such as sol-gel process, Langmuir-Blodgett method (LB method),layer-by-layer method, spin coating, inkjet coating, dip coating andspraying, and as long as the film can be formed to finally provide theeffects of the present invention, any method may be used.

In the case of forming a functional layer (a light-emitting layer or ahole or electron injection layer that is formed, if desired) of thepresent invention from a polymer material, a spin coating method, acasting method, a dipping method, a bar coating method, or a wet processsuch as roll coating, inkjet coating, nozzle coating and spraying, isused. In this case, a large-scale vacuum apparatus is not necessary,enabling film formation using inexpensive equipment, and at the sametime, a large-area organic electroluminescence element can be easilymanufactured.

Incidentally, the glass substrate 100 is one sheet of a colorlesstransparent glass. Examples of the glass substrate 100 which can be usedinclude a transition metal oxide glass such as transparent orsemi-transparent soda lime glass, barium/strontium-containing glass,lead glass, aluminosilicate glass, borosilicate glass, bariumborosilicate glass and quartz glass, and an inorganic glass such asinorganic fluoride glass.

Embodiment 3

The display device using the organic electroluminescence element in anembodiment of the present invention is described below. This embodimentis one example of the top emission-type polymer organicelectroluminescence display device.

First a display device using an organic electroluminescence element isdescribed. The display device of this embodiment is fundamentallymanufactured as follows: an insulating film is provided on a drivingsubstrate comprising a glass substrate having produced and providedthereon a transistor composed of polysilicon; an aluminum alloy ispatterned thereon as the anode; and a sputtering film of molybdenumoxide and tungsten is formed thereon as the hole injection layer toextend across a plurality of picture elements. By forming the holeinjection layer in this way without separating between picture elements,the process can be simplified. Subsequently, the surface is oxidized byan annealing treatment in the atmosphere; a partition wall is providedto separate respective picture elements of RGB; an interlayer and alight-emitting layer are coated by an inkjet method; a Ba-dopedlow-molecular electron transport material is vapor co-deposited as theelectron transport layer on the entire surface of RGB picture elements;ITO is then sputtered as the cathode; and the stack is subjected toencapsulation to manufacture a device. Thanks to the annealing treatmentin the atmosphere performed here, the light emission efficiency isenhanced. In this embodiment, the surface is annealed to relativelyincrease the proportion of oxygen and bring about approximation to thetheoretical ratio of the compound, whereby an electron blocking functionis caused to be exerted in the surface. Furthermore, in this embodiment,a barium oxide-containing molybdenum oxide layer (electron injectionlayer) 5 is provided as a functional layer to intervene on the cathode 6side, and an active matrix-type display device is fabricated using thesame light-emitting device as the organic electroluminescence element ofembodiment 1 shown in FIG. 1. It is considered that by virtue of such aconstruction, although the transition metal oxide is oxygen-deficientand has a small specific resistance, when molybdenum oxide (transitionmetal oxide) is oxidized by surface oxidation or the like, this allowsincreasing the proportion of oxygen on the light-emitting layer side andbringing about approximation to the theoretical ratio of the compound,as a result, an electron blocking function is exerted in the surface.

As shown in FIG. 4 illustrating an equivalent circuit diagram of thismatrix-type display device, in FIG. 5 illustrating an layout explanatorydiagram, in FIG. 6 illustrating a cross-sectional view and in FIG. 7illustrating a top surface explanatory diagram, the display device aboveconstitutes an active matrix-type display device where a driving circuitis formed for each picture element.

This display device 140 is fabricated, as shown in FIG. 4 illustratingan equivalent circuit diagram and in FIG. 5 illustrating an layoutexplanatory diagram, such that a plurality of driving circuits eachconsisting of an organic electroluminescence element(electroluminescence) 110 forming a picture element, two thin-filmtransistors (TFT: T1, T2) composed of a switching transistor 130 and acurrent transistor 120 as the photodetection element, and a capacitor Care arrayed vertically and horizontally, a gate electrode of a first TFT(T1) in each of the driving circuits arranged in a horizontal row isconnected to a scanning line 143 to give a scanning signal, and a drainelectrode of a first TFT in each of the driving circuits arranged in avertical row is connected to a data line to supply a light emissionsignal. To one end of the electroluminescence element(electroluminescence), a driving power source (not shown) is connected,and one end of the capacitor C is grounded. Reference numeral 143denotes a scanning line, 144 denotes a signal line, 145 denotes a commonpower feeder cable, 147 denotes a scanning line driver, 148 denotes asignal line driver and 149 denotes a common power feeder driver.

FIG. 6 is a cross-sectional explanatory view of the organicelectroluminescence element (FIG. 6 is an A-A cross-sectional view ofFIG. 5), and FIG. 7 is a top surface explanatory diagram of the displaydevice, where on a glass substrate 400 having formed thereon drivingTFTs (not shown), an anode (Al) 112, a surface-oxidized molybdenum oxidelayer (transition metal oxide layer) 113, an organic interlayer (chargeblocking layer) (not shown), a light-emitting layer 114 (a redlight-emitting layer R, a green light-emitting layer G and a bluelight-emitting layer B), a barium oxide-containing molybdenum oxidelayer 115 and a cathode 116 are formed to fabricate a top emission-typeorganic electroluminescence element. As for the structure, the anode andthe charge injection layer are individually formed, the light-emittinglayer has an opening area defined by a protrusion composed of a siliconoxide layer as the picture element regulating layer 117, and the cathode116 is formed like a stripe running in a direction orthogonal to theanode.

The driving TFT is formed such that, for example, after an organicsemiconductor layer (polymer layer) is formed on a glass substrate 100and covered with a gate insulating film, a gate electrode is formedthereon and at the same time, a source/drain electrode is formed througha through-hole formed in the gate insulating film. On this transistor, apolyimide film or the like is coated to form an insulating layer (flatlayer) and furthermore, an anode (ITO) 112, a surface-oxidizedmolybdenum oxide layer 113, an electron blocking layer, an organicsemiconductor layer 114 such as light-emitting layer, a bariumoxide-containing molybdenum oxide layer 115 and a cathode 116 (Alultra-thin film and ITO) are formed to manufacture an organicelectroluminescence element. In FIG. 7, the capacitor and wiring areomitted, but these are formed on the same glass substrate. A pluralityof picture elements each composed such TFT and organicelectroluminescence element are formed in a matrix manner on 11 e samesubstrate to constitute an active matrix-type display device.

At the manufacturing, as shown in FIG. 5, a picture element regulatinglayer 117 is formed, for example, on a scanning line 143, a signal line144, a switching TFT 130 and an electrode 112 composed of a pattern ofaluminum constituting a picture element electrode, which are formed on aglass substrate 100, and an opening is then provided.

As an upper layer thereof, a transition metal oxide layer 113 is formedover the entire surface by a sputtering method, and the surface isoxidized with an ultraviolet ray.

Thereafter, if desired, TFB as an interlayer is coated by an inkjetmethod. This TFB layer may be coated over the entire surface similarlyto the transition metal oxide layer or may be coated only on a portioncorresponding to the opening.

After passing through a drying step, a polymer organicelectroluminescence material for a desired color (any one of RGB) iscoated by an inkjet method on a position corresponding to the opening toform a light-emitting layer 114.

Furthermore, a barium oxide-containing molybdenum layer 115 isfilm-formed by vapor co-deposition or the like, and finally, a cathode116 is formed in a region where a display picture element 141 isdisposed.

According to this construction, a display device capable of high-speeddriving and assured of high reliability can be provided. Since amolybdenum oxide layer that is integrally formed and is an oxide of atransition metal intervenes between the light-emitting layer and theanode in the form of being surface-oxidized, no cross-talk occurs andthe light-emitting layer is filled in a recess part smoothed by themolybdenum oxide layer and controlled in size with high precision.Therefore, the light-emitting layer can be unfailingly formed by aninkjet method without causing position slippage, and a light-emittinglayer controlled in the film thickness and size with high precision canbe obtained. Also on the light-emitting layer, an integrally-formedmolybdenum oxide layer is formed and therefore, the light-emitting layeris free from a sputtering damage when forming the cathode or a plasmadamage in the patterning step.

In this way, the light-emitting layer can be formed on auniformly-formed surface and the surface can be kept in a smooth state,so that the light-emitting layer can be uniformly formed and an electricfield applied by the anode and cathode can be uniformly imparted to thelight-emitting layer without occurrence of electric field concentration,succeeding in obtaining good light emission characteristics. Also, eachlight-emitting layer is uniformly formed, so that good light emissioncharacteristics can be obtained without variation in the light emissioncharacteristics.

An example of the lighting device using a light-emitting device havingtwo-dimensionally disposed therein a plurality of electroluminescenceelements is described below by referring to FIG. 5. As regards thetwo-dimensionally disposed electroluminescence elements 110, forexample, such a construction as concurrently lighting on/off allelectroluminescence elements can be quite easily realized. However, evenin the case of such a construction as concurrently lighting on/off theelectroluminescence elements, it is preferred to take a constructionwhere at least one electrode (for example, a picture element electrodecomposed of Al (see, the anode 112 in FIG. 6)) is separated forindividual electroluminescence elements. This is because even when adisplay picture element 141 is found to have a defect by some factors,the defect remains in the display picture element 141 and therefore, theproduction yield of the lighting device as a whole can be enhanced. Thelighting device having the above-described construction is applicable,for example, to domestic lighting equipment in general. In thisapplication, since the lighting device can be constructed extremelythin, the lighting device can be easily installed not only on a ceilingbut also on a wall.

Furthermore, the light emission pattern of the two-dimensionallydisposed electroluminescence elements can be easily controlled bysupplying arbitrary data, and the electroluminescence element of thepresent invention can be constructed to give a light emitting region ina size of, for example, 40 μm-square, so that an application allowingthe lighting device to serve also as a panel-type display device bysupplying data can be constructed. Of course, in this case, the displaypicture elements 141 need to be color-coded red, green or blue dependingon the position, but multiple coloration can be very easily realized byusing an inkjet method.

Conventionally, when a lighting device is compared with a displaydevice, the light emission brightness is higher in the lighting device.However, the electro-luminescence element 110 of the present inventioncan take a sufficiently large area and has very high light emissionbrightness and therefore, this element can be used as both a lightingdevice and a display device. In this case, a mechanism for adjusting thelight emission brightness is needed due to difference in the function(that is, the use mode) between the lighting device and the displaydevice, and the mechanism therefor can be realized, for example, byemploying the construction of embodiment 2 above and controlling thedrive current, thereby adjusting the light emission brightness of eachelectroluminescence element. More specifically, the light emissionbrightness can be adjusted by, in use as a lighting device, driving allelectroluminescence elements with a larger current, and in use as adisplay device, driving each electroluminescence element with a smallcurrent at a current value controlled according to the gradation (thatis, according to the image data). In such an application, a single powersource may be used for the power source when functioning as a lightingdevice and when functioning as a display device, but in the case where adrive current is controlled, for example, where the dynamic range of adigital-to-analog converter is large and the number of gradationsbecomes insufficient in use as a display device, it is preferred to takea construction of switching the power source between those (notillustrated) connected to a common power feeder cable 145 shown in FIGS.4 and 5 according to the use mode. Of course, even in the use mode as alighting device, in the case of an embodiment where brightness needs tobe controlled (that is, a lighting device having a light controlfunction), this can be easily coped with by the above-described controlof a current value according to the gradation. Furthermore, theelectroluminescence element of the present invention can be formed notonly on a glass substrate 100 but also on a resin substrate such as PETand therefore, can be applied as a lighting device for variousilluminations.

Incidentally, the thin film transistor may be composed of an organictransistor. Also, a structure where an organic electroluminescenceelement is stacked on a thin film transistor, or a structure where athin film transistor is stacked on an organic electroluminescenceelement, is also effective.

In addition, in order to obtain a high-image quality electroluminescencedisplay device, an electroluminescence substrate having formed thereonan organic electro-luminescence element may be laminated together with aTFT substrate having formed thereon TFT, a capacitor, a wiring and thelike, such that an electrode of the electro-luminescence substrate andan electrode of the TFT substrate are connected using a connection bank.

As a modified example of embodiment 3, the method for color coding in acolor display device is described below.

In this example, RGB coding is performed using a substrate having formedthereon a thin film transistor. A flattening film is formed of aninsulating organic material on a TFT substrate, a transparent electrodeis formed on the substrate by sputtering ITO, image regulating layers inrespective thicknesses are formed of SiN similarly to embodiment 4, anddry etching is applied to give a desired light emission region.

Using this TFT substrate, RGB coating is performed. A flattening film isformed of an insulating organic material on a TFT substrate, atransparent electrode is formed on the substrate by sputtering ITO,image regulating layers in respective thicknesses are formed of SiONsimilarly to embodiment 1, and dry etching is applied to give a desiredlight emission region. Thereafter, as the hole injection layer of thepresent invention, sputtering is performed while flowing oxygen andargon by using an alloy of tungsten and molybdenum as the target to forma hole injection layer composed of an oxide. Subsequently, the substrateis introduced into an oxygen plasma apparatus and irradiated 200 W for30 seconds to oxidize the outermost surface.

Furthermore, a bank composed of polyimide is formed for each row of RGBpicture elements, whereby a substrate divided in a stripe manner intorespective rows of elements by a bank is obtained. Anelectroluminescence element is formed using the resulting substrate.This substrate is characterized by high resistance compared with PEDTand no occurrence of cross-talk and therefore can be used in such a way.Thereafter, TFB as an interlayer is coated to a thickness of 20 nm by aninkjet method for each of rows divided by a bank. After drying andbaking, an ink prepared from a red light-emitting material, a greenlight-emitting material or a blue light-emitting material is coated asthe light-emitting layer by using a dispenser to an average thickness of80 nm on each of rows divided by a bank. Furthermore, a layer composedof a Ba-doped low-molecular electron transport material is formed as theelectron injection layer by a resistance heating vapor depositionmethod, and aluminum is then vacuum vapor-deposited to a thickness of100 nm as the cathode. The electron injection layer and cathode areformed to cover all picture elements.

TFT in a part of the obtained sample is operated by an external circuitand evaluated for the light emission state and lifetime. As a result,sufficient light emission state and lifetime are obtained.

Embodiment 5 Lighting Device

As an example of the lighting device, molybdenum oxide is sputtered to athickness of 100 nm on a 30 cm-square glass substrate having providedthereon ITO, and a polymer-type white light-emitting material is thenspin-coated to a thickness of 100 nm. Subsequently, sodium fluoride is10% vapor co-deposited with zinc oxide of the present invention as theelectron injection layer, and Ag is further formed to a thickness of 100nm as the cathode.

DC of 10 V is applied to the thus-obtained sample, as a result, uniformlight emission is obtained and even in an unencapsulated state, thedevice is stably driven for 1 hour without causing a short circuit orproducing a dark spot.

Example 1

The present invention is described below by referring to Examples. Theorganic electroluminescence light-emitting device of the presentinvention is an example corresponding to embodiment 1 and is describedby referring to FIG. 1.

On a glass substrate 1 with a 0.7 mm-thick patterned ITO(2), amolybdenum oxide layer was film-formed as the hole injection layer to athickness of 10 nm by a sputtering method and irradiated for 3 minutesat an oscillation wavelength of 172 nm by using an excimer UV exposureapparatus, SNA/14, manufactured by Ushio Inc. to oxidize the surface.The sample was then placed in a glove box filled with nitrogen, and TFB(poly-2,7-9,9-di-n-octylfluorene-alt-1,4-phenylene-4-sec-butylphenylimino-1,4-phenylene),which is a copolymerization polymer of fluorene and triphenylamine, wasspin-coated as the interlayer to a thickness of 20 nm and baked at 180°C. in nitrogen. Subsequently, a green light-emitting material (producedby Sumation Co., Ltd.) was spin-coated to 80 nm and similarly baked innitrogen to form a light-emitting layer. The element was thentransferred to a vacuum vapor deposition apparatus, and Ba of 5 nm inthickness as the electron injection layer and Al of 100 nm in thicknessas the cathode were vapor-deposited. After sealing a getter agent for anorganic EL in a nitrogen atmosphere, the periphery of the obtainedelement was sealed with a UV-sensitive encapsulating resin. This wasdesignated as Sample 103. Sample 104 was manufactured in the same manneras Sample 102 except that in Sample 102, after forming the molybdenumoxide film, the substrate was introduced into an oxygen plasma apparatusand irradiated with a plasma of 200 W for 1 minute.

Here, at the surface oxidation, even when the treatment is performed at250° C. for 45 minutes in the atmosphere, the same results wereobtained.

As regards Comparative Sample 102 for comparison, the sample obtained bynot performing UV irradiation or oxygen plasma irradiation in Sample 103or 104 was used directly. Also, Sample 101 was manufactured in the samemanner as Samples 102 to 104 except that in the manufacture ofComparative Sample 102, instead of vacuum vapor-depositing molybdenumoxide to a thickness of 10 nm, PEDT produced by H. C. Starck wasspin-coated as the hole injection layer on a glass substrate 1 with a0.7 mm-thick patterned ITO(2) in the atmosphere to a thickness of 60 nmand dried by baking at 200° C. for 10 minutes and after transferring theelement into a glove box, an interlayer and layers therebelow werecoated.

As described above, Sample 103 was manufactured in the same manner asSample 102 except that in Sample 102, UV irradiation was performed afterforming the molybdenum oxide layer.

Sample 104 was manufactured in the same manner as Sample 102 except thatin Sample 102, after forming the molybdenum oxide film, the substratewas introduced into an oxygen plasma apparatus and irradiated with aplasma of 200 W for 1 minute. Samples 101 to 104 obtained were evaluatedfor IV characteristics and light emission brightness characteristics byusing ITO and Al as the anode and the cathode, respectively.

As a result, the voltage for driving Samples 102 to 104 was decreased byabout 0.5 V as compared with Sample 101. The light emissioncharacteristics are shown in the Table below.

TABLE 1 Driving Light Emission Lifetime Efficiency (Cd/A) at 12,000Sample Hole Injection Layer at 20 mA/cm² cd/m² 101 (Comparative PEDT10.2 120 hr Example) 102 (Comparative MoO_(x) (untreated) 8.4 230 hrExample) 103 (Iinvention) MoO_(x) (UV treated) 10.5 310 hr 104(Invention) MoO_(x) 11.1 320 hr (O₂ plasma treated)

As apparent from Table 1, in the case of using untreated MoO_(x), thedriving lifetime is improved but the light emission efficiency is worsethan in Comparative Example using PEDT, whereas in the sample of thepresent invention subjected to an oxidation treatment, the lightemission efficiency is equal to or higher than that when using PEDT andthe driving lifetime is also enhanced.

Next, a pattern having a plurality of picture elements as shown FIG. 5was produced. ITO as the anode was divided for individual pictureelements, and the pattern was produced to make it possible to externallydrive individual elements. On this substrate, a photosensitive resistwas coated as an insulating film, exposed and developed to form apicture element with a desired size. Furthermore, a material used inSamples 101 to 104 was coated or vapor-deposited on the entire surfacethereof. In the samples obtained, the hole injection layer, interlayer,light-emitting layer and anode each was formed across a plurality ofpicture elements. In these samples, a voltage was applied to only onepicture element to emit light at about 1,000 cd/m², as a result, inSample 101, light emission at a level enabling an adjacent pictureelement to be viewed with an eye was observed. In Samples 102 to 104,light emission was not confirmed.

In general, an interlayer and a light-emitting layer are formed of anorganic material and therefore, have a high resistance and even whensuch a layer is integrally formed across picture elements, cross-talkdoes not occur. On the other hand, PEDT is originally a solutionobtained by dispersing the mixture in water and even when dried, issmall in the specific resistance. Accordingly, in the case of forming afilm thereof across a plurality of picture elements, there raises aserious problem that when a common cathode is used, an adjacent pictureelement not applied with a voltage also emits light. Molybdenum oxidefor use in the present invention has a high specific resistance in thetransverse direction and advantageously causes no cross-talk but isdeficient in that when molybdenum oxide as-deposited is used, lightemission efficiency equal to or greater than that in using PEDT is notobtained depending on the light-emitting material. However, when theoxidation treatment of the present invention is performed, the lightemission efficiency becomes equal to or greater than that in using PEDT,and IV characteristics at an equal level are obtained. At the same time,a merit can be found in that thanks to enhancement of the light emissionefficiency, the drive current value is decreased and the lifetime isalso improved.

In Example 1, the ratio of molybdenum to oxygen was examined byanalyzing the surface composition of the molybdenum oxide thin film usedin Samples 102 to 104 by the use of an X-ray photoelectron spectroscopy.As a result, in Sample 102, the ratio of Mo to oxygen was determined as2.7. This is a value for a ratio between 3p orbital signal of Mo and 2porbital signal of oxygen. The ratio was determined as 2.9 and 3.0 inSample 103 and Sample 104, respectively. This apparently reveals thatmolybdenum oxide is oxidized by the surface oxidation treatmentindicated in Example 1 and the proportion of oxygen is relativelyincreased in comparison with molybdenum. That is, by virtue of theoxidation treatment of the present invention, the oxygen-deficientportion is oxidized by the oxidation treatment, as a result, the surfaceof oxygen-deficient molybdenum oxide comes close to the theoreticalratio of the compound. In such an oxidation treatment, oxidation isconsidered to proceed in the thickness direction of a thin filmaccording to the time, power, temperature or the like of the oxidationtreatment, but if oxidation proceeds and the stoichiometric ratio isestablished in the entire layer, conversely, the injection efficiency isgreatly impaired. Accordingly, in order to maximally bring out theeffect of enhancing the light emission efficiency of the presentinvention, it is considered to be necessary that on the side in contactwith the anode, oxygen deficiency is present to form a defect level onHOMO and on the side in contact with a material having a light-emittingfunction, only the extreme surface is subjected to an oxidationtreatment.

Here, it is more effective that not only the ratio of molybdenum tooxygen at the layer with a light-emitting function side is greater thanthat at the anode side but also the proportion of oxygen is greater thanthe stoichiometric ratio (X>3).

Example 2

Samples 202 to 204 were manufactured in the same manner by forming atungsten oxide-sputtered film to a thickness of 20 nm in place ofmolybdenum oxide of Samples 102 to 104 of Example 1. As for the tungstenoxide, a tungsten oxide film was formed by so-called reactive sputteringof introducing oxygen by using a metal target. Other steps are the sameas in Example 1. When the same evaluations as in Example 1 wereperformed, almost the same results were obtained.

Example 3

Samples 302 to 304 were manufactured and evaluated in the same manner bypreparing an alloy target of molybdenum and tungsten in an element ratioof 30:70 and using the target in the samples of Example 2. The resultsare shown in Table 2.

TABLE 2 Driving Light Emission Lifetime Efficiency (Cd/A) at 12,000Sample Hole Injection Layer at 20 mA/cm² cd/m² 101 (Comparative PEDT10.2 120 hr Example) 302 (Comparative MoWO_(x) (untreated) 8.2 190 hrExample) 303 (Invention) MoWO_(x) (UV treated) 11.5 350 hr 304(Invention) MoWO_(x) 12.6 380 hr (O₂ plasma treated)

As apparent from these results, in the samples using an alloy target oftungsten and molybdenum and being subjected to the surface treatment ofthe present invention, the increase of light emission efficiency islarger than in the results when manufacturing the sample by usingmolybdenum alone or tungsten alone and performing the surface treatment.Detailed reasons therefor are not clearly known but are considered thatthe defect level formed in the extreme surface becomes a level suitablefor an electron blocking layer.

Also, in the case where a large number of organic electroluminescenceelement cells are arrayed and formed and where a resinous partition wallis provided and a layer with a light-emitting function is formed in theregion surrounded by the partition wall, a resin film needs to bepatterned on the electron injection layer and in this patterning step,molybdenum oxide may dissolve out. However, by virtue of containingtungsten, molybdenum oxide can be prevented from dissolving out and alsoin this case, not only a smooth surface can be maintained without losingsurface smoothness but also characteristic deterioration can beprevented.

Example 4

Using the hole injection layer used in Samples 302 to 304 of Example 3,samples were manufactured without use of an interlayer by coating agreen light-emitting material and forming a cathode in the same manner,and designated as Samples 402 to 404. These samples were evaluated forthe characteristics, as a result, the drive voltage was furtherdecreased by about 0.5 V. This is considered to occur because the entirefilm thickness of the organic semiconductor layer is decreased due toremoval of an interlayer. The light emission efficiency was greatlyreduced in the case of untreated molybdenum oxide, whereas in samples ofthe present invention subjected to an oxidation treatment, reduction ofthe light emission efficiency does not occur even when an interlayer isremoved. This is considered to be ascribable to the fact that byapplying an oxidation treatment, only the surface layer in which thesurface of molybdenum oxide is oxidized comes to exhibit the property asan insulator and an effective depletion layer is not allowed to bepresent at the energy level of an electron transported by hoppingconduction on LUMO of the light-emitting layer. As for the holeinjection, it can be understood that tunnel injection is possible with athickness of several nm and the hole injection efficiency is notdecreased.

TABLE 3 Driving Light Emission Lifetime Efficiency (Cd/A) at 12,000Sample Hole Injection Layer at 20 mA/cm² cd/m² 101 (Comparative PEDT10.2 120 hr Example) 402 (Comparative MoO_(x) (untreated) 6.1 240 hrExample) 403 (Invention) MoO_(x) (UV treated) 10.5 420 hr 404(Invention) MoO_(x) 10.1 440 hr (O₂ plasma treated)

It is clearly seen from these Examples that the oxidation treatment ofthe present invention can enhance the light emission efficiency withoutadversely affecting the IV characteristics and at the same time, theitems required in terms of cross-talk are satisfied.

According to the organic electroluminescence element of the presentinvention, an organic electroluminescence element ensuring particularlyenhanced electron blocking characteristics as well as long lifetime canbe provided, and this organic electroluminescence element can be appliednot only to an application requiring multicolor emission, such astelevision and display, but also to a device utilizing monochromaticemission, such as exposure device, printer and facsimile.

1-15. (canceled)
 16. An organic electroluminescence element comprising:an anode; a cathode; a plurality of functional layers formed between theanode and the cathode, the functional layer including a layer with alight-emitting function formed from at least one kind of an organicsemiconductor, a charge injection layer formed between the anode and thelayer with a light-emitting function and formed of at least one kind ofa transition metal oxide, wherein a ratio of the transition metal tooxygen at the anode side in the transition metal oxide layer is smallerthan a stoichiometric ratio and a ratio of the transition metal tooxygen at the layer with a light-emitting function side is greater thanthat at the anode side.
 17. The organic electroluminescence elementaccording to claim 16, wherein the transition metal oxide layer is atransition metal oxide layer formed by performing a surface oxidationtreatment after film formation.
 18. The organic electroluminescenceelement according to claim 17, wherein the transition metal oxide layercontains a transition metal oxide layer which surface is oxidized by aheat treatment.
 19. The organic electroluminescence element according toclaim 17, wherein said transition metal oxide layer contains atransition metal oxide layer which surface is oxidized by an ultraviolettreatment.
 20. The organic electroluminescence element according toclaim 17, wherein the transition metal oxide layer contains a transitionmetal oxide layer which surface is oxidized with an oxygen-containingplasma.
 21. The organic electroluminescence element according to claim16, wherein the transition metal oxide layer is formed by a dry process.22. The organic electroluminescence element according to claim 17,wherein the transition metal oxide layer is formed by a dry process. 23.The organic electroluminescence element according to claim 18, whereinthe transition metal oxide layer is formed by a dry process.
 24. Theorganic electroluminescence element according to claim 19, wherein thetransition metal oxide layer is formed by a dry process.
 25. The organicelectroluminescence element according to claim 20, wherein thetransition metal oxide layer is formed by a dry process.
 26. The organicelectroluminescence element according to claim 16, wherein out of thetransition metal oxide layer, the transition metal oxide layerpositioned on the anode side has a specific resistance of 1×10 exp(5)Ωcmor more.
 27. The organic electroluminescence element according to claim17, wherein out of the transition metal oxide layer, the transitionmetal oxide layer positioned on the anode side has a specific resistanceof 1×10 exp(5)Ωcm or more.
 28. The organic electroluminescence elementaccording to claim 18, wherein out of the transition metal oxide layer,the transition metal oxide layer positioned on the anode side has aspecific resistance of 1×10 exp(5) Ωcm or more.
 29. The organicelectroluminescence element according to claim 19, wherein out of thetransition metal oxide layer, the transition metal oxide layerpositioned on the anode side has a specific resistance of 1×10 exp(5)Ωcmor more.
 30. The organic electroluminescence element according to claim20, wherein out of the transition metal oxide layer, the transitionmetal oxide layer positioned on the anode side has a specific resistanceof 1×10 exp(5)Ωcm or more.
 31. The organic electroluminescence elementaccording to claim 16, wherein the transition metal oxide layer isintegrally formed across a plurality of picture elements.
 32. Theorganic electroluminescence element according to claim 17, wherein thetransition metal oxide layer is integrally formed across a plurality ofpicture elements.
 33. The organic electroluminescence element accordingto claim 18, wherein the transition metal oxide layer is integrallyformed across a plurality of picture elements.
 34. The organicelectroluminescence element according to claim 19, wherein thetransition metal oxide layer is integrally formed across a plurality ofpicture elements.
 35. The organic electroluminescence element accordingto claim 20, wherein the transition metal oxide layer is integrallyformed across a plurality of picture elements.
 36. The organicelectroluminescence element according to claim 21, wherein thetransition metal oxide layer is integrally formed across a plurality ofpicture elements.
 37. The organic electroluminescence element accordingto claim 22, wherein the transition metal oxide layer is integrallyformed across a plurality of picture elements.
 38. The organicelectroluminescence element according to claim 23, wherein thetransition metal oxide layer is integrally formed across a plurality ofpicture elements.
 39. The organic electroluminescence element accordingto claim 24, wherein the transition metal oxide layer is integrallyformed across a plurality of picture elements.
 40. The organicelectroluminescence element according to claim 25, wherein thetransition metal oxide layer is integrally formed across a plurality ofpicture elements.
 41. The organic electroluminescence element accordingto claim 26, wherein the transition metal oxide layer is integrallyformed across a plurality of picture elements.
 42. The organicelectroluminescence element according to claim 27, wherein thetransition metal oxide layer is integrally formed across a plurality ofpicture elements.
 43. The organic electroluminescence element accordingto claim 28, wherein the transition metal oxide layer is integrallyformed across a plurality of picture elements.
 44. The organicelectroluminescence element according to claim 29, wherein thetransition metal oxide layer is integrally formed across a plurality ofpicture elements.
 45. The organic electroluminescence element accordingto claim 30, wherein the transition metal oxide layer is integrallyformed across a plurality of picture elements.
 46. The organicelectroluminescence element according to claim 16, wherein the visiblelight transmittance of the metal oxide layer is 70% or more.
 47. Theorganic electroluminescence element according to claim 17, wherein thevisible light transmittance of the metal oxide layer is 70% or more. 48.The organic electroluminescence element according to claim 18, whereinthe visible light transmittance of the metal oxide layer is 70% or more.49. The organic electroluminescence element according to claim 19,wherein the visible light transmittance of the metal oxide layer is 70%or more.
 50. The organic electroluminescence element according to claim20, wherein the visible light transmittance of the metal oxide layer is70% or more.
 51. The organic electroluminescence element according toclaim 21, wherein the visible light transmittance of the metal oxidelayer is 70% or more.
 52. The organic electroluminescence elementaccording to claim 22, wherein the visible light transmittance of themetal oxide layer is 70% or more.
 53. The organic electroluminescenceelement according to claim 23, wherein the visible light transmittanceof the metal oxide layer is 70% or more.
 54. The organicelectroluminescence element according to claim 24, wherein the visiblelight transmittance of the metal oxide layer is 70% or more.
 55. Theorganic electroluminescence element according to claim 25, wherein thevisible light transmittance of the metal oxide layer is 70% or more. 56.The organic electroluminescence element according to claim 26, whereinthe visible light transmittance of the metal oxide layer is 70% or more.57. The organic electroluminescence element according to claim 27,wherein the visible light transmittance of the metal oxide layer is 70%or more.
 58. The organic electroluminescence element according to claim28, wherein the visible light transmittance of the metal oxide layer is70% or more.
 59. The organic electroluminescence element according toclaim 29, wherein the visible light transmittance of the metal oxidelayer is 70% or more.
 60. The organic electroluminescence elementaccording to claim 30, wherein the visible light transmittance of themetal oxide layer is 70% or more.
 61. The organic electroluminescenceelement according to claim 31, wherein the visible light transmittanceof the metal oxide layer is 70% or more.
 62. The organicelectroluminescence element according to claim 32, wherein the visiblelight transmittance of the metal oxide layer is 70% or more.
 63. Theorganic electroluminescence element according to claim 33, wherein thevisible light transmittance of the metal oxide layer is 70% or more. 64.The organic electroluminescence element according to claim 34, whereinthe visible light transmittance of the metal oxide layer is 70% or more.65. The organic electroluminescence element according to claim 35,wherein the visible light transmittance of the metal oxide layer is 70%or more.
 66. The organic electroluminescence element according to claim36, wherein the visible light transmittance of the metal oxide layer is70% or more.
 67. The organic electroluminescence element according toclaim 37, wherein the visible light transmittance of the metal oxidelayer is 70% or more.
 68. The organic electroluminescence elementaccording to claim 38, wherein the visible light transmittance of themetal oxide layer is 70% or more.
 69. The organic electroluminescenceelement according to claim 39, wherein the visible light transmittanceof the metal oxide layer is 70% or more.
 70. The organicelectroluminescence element according to claim 40, wherein the visiblelight transmittance of the metal oxide layer is 70% or more.
 71. Theorganic electroluminescence element according to claim 41, wherein thevisible light transmittance of the metal oxide layer is 70% or more. 72.The organic electroluminescence element according to claim 42, whereinthe visible light transmittance of the metal oxide layer is 70% or more.73. The organic electroluminescence element according to claim 43,wherein the visible light transmittance of the metal oxide layer is 70%or more.
 74. The organic electroluminescence element according to claim44, wherein the visible light transmittance of the metal oxide layer is70% or more.
 75. The organic electroluminescence element according toclaim 45, wherein the visible light transmittance of the metal oxidelayer is 70% or more.
 76. A method for manufacturing anelectroluminescence element which comprises an anode; a cathode; aplurality of functional layers formed between the anode and the cathode,the functional layer including a layer with a light-emitting functionformed of at least one kind of an organic semiconductor; and a chargeinjection layer formed between the anode and the layer with alight-emitting function and formed from at least one kind of atransition metal oxide layer, the method comprising: the step of formingthe transition metal oxide layer is a step of forming the transitionmetal oxide layer such that the ratio of the metal to oxygen at theanode side in the transition metal oxide layer is smaller than thestoichiometric ratio and the ratio of the metal to oxygen at the layerwith a light-emitting function side is greater than that at the anodeside.
 77. The method for manufacturing an organic electroluminescenceelement according to claim 76, wherein the step of forming saidtransition metal oxide layer contains a step of film-forming atransition metal oxide layer and a surface oxidation treatment step ofoxidizing the surface of said transition metal oxide layer.
 78. Themethod for manufacturing an organic electroluminescence elementaccording to claim 77, wherein the surface oxidation treatment stepcontains a step of oxidatively treating the surface by a heat treatment.79. The method for manufacturing an organic electroluminescence elementaccording to claim 77, wherein the surface oxidation treatment stepcontains a step of oxidatively treating the surface by an ultraviolettreatment.
 80. The method for manufacturing an organicelectroluminescence element according to claim 77, wherein the surfaceoxidation treatment step contains a step of oxidatively treating thesurface with an oxygen-containing plasma.
 81. The method formanufacturing an organic electroluminescence element according to claim76, wherein the step of forming said transition metal oxide layer is adry process.
 82. The method for manufacturing an organicelectroluminescence element according to claim 77, wherein the step offorming said transition metal oxide layer is a dry process.
 83. Themethod for manufacturing an organic electroluminescence elementaccording to claim 78, wherein the step of forming said transition metaloxide layer is a dry process.
 84. The method for manufacturing anorganic electroluminescence element according to claim 79, wherein thestep of forming said transition metal oxide layer is a dry process. 85.The method for manufacturing an organic electroluminescence elementaccording to claim 80, wherein the step of forming said transition metaloxide layer is a dry process.